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| Schottky Barrier Diodes (SBD) MA3S795E Silicon epitaxial planar type Unit : mm 0.28 0.05 For switching circuits 1.60 - 0.03 0.80 0.80 0.51 0.51 0.80 1.60 0.1 0.80 0.05 * Extra-small (SS-mini type) package, allowing high-density mounting * Optimum for low voltage rectification because of its low VF (VF = 0.3 V or less at IF = 1 mA) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) + 0.05 I Features 1 3 2 0.28 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125 -55 to +125 C C mA Unit V V mA 0.60 - 0.03 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Carhode 1 Cathode 2 SS-Mini Type Package (3-pin) 0.88 - 0.03 Marking Symbol: M3D Internal Connection 1 3 2 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1 Conditions Min Typ Max 30 0.3 1 Unit A V V pF ns Detection efficiency 65 0.12 - 0.02 + 0.05 + 0.05 0.28 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3S795E IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 104 Ta = 125C IR VR 102 75C 25C 0.8 Forward current IF (mA) 103 IF = 30 mA - 20C Forward voltage VF (V) Reverse current IR (A) Ta = 125C 10 75C 102 0.6 10 mA 0.4 1 25C 10 10-1 0.2 1 mA 1 10-2 0 0.4 0.8 1.2 1.6 2.0 2.4 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3.0 f = 1 MHz Ta = 25C IR T a 104 VR = 25 V 103 Terminal capacitance Ct (pF) 2.5 2.0 Reverse current IR (A) 3V 1V 102 1.5 10 1.0 0.5 1 0 0 5 10 15 20 25 30 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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